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K7P161866A - (K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM

K7P161866A_6608715.PDF Datasheet


 Full text search : (K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM


 Related Part Number
PART Description Maker
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
Cypress Semiconductor Corp.
CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC 4-Mbit (512K x 8) Static RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 Static RAM 12k × 8静态RAM
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
GS816136CD-300IT 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
GSI Technology, Inc.
CY62148ELL-55SXA 4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
Cypress Semiconductor, Corp.
CY7C1012DV3307 CY7C1012DV33-8BGXC 12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
Cypress Semiconductor, Corp.
CY7C1062AV25-10BGC CY7C1062AV25-10BGI 512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
KM29V040T 512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
SAMSUNG SEMICONDUCTOR CO. LTD.
W24V04 512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
Winbond Electronics Corp
CY62148-55 CY62148-70 CY62148L-55SC 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
 
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